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Abstract An emerging paradigm in modern electronics is that of CMOS+$${\mathsf{X}}$$ $X$requiring the integration of standard CMOS technology with novel materials and technologies denoted by$${\mathsf{X}}$$ $X$. In this context, a crucial challenge is to develop accurate circuit models for$${\mathsf{X}}$$ $X$that are compatible with standard models for CMOS-based circuits and systems. In this perspective, we present physics-based, experimentally benchmarked modular circuit models that can be used to evaluate a class of CMOS+$${\mathsf{X}}$$ $X$systems, where$${\mathsf{X}}$$ $X$denotes magnetic and spintronic materials and phenomena. This class of materials is particularly challenging because they go beyond conventional charge-based phenomena and involve the spin degree of freedom which involves non-trivial quantum effects. Starting from density matrices—the central quantity in quantum transport—using well-defined approximations, it is possible to obtain spin-circuits that generalize ordinary circuit theory to 4-component currents and voltages (1 for charge and 3 for spin). With step-by-step examples that progressively become more complex, we illustrate how the spin-circuit approach can be used to start from the physics of magnetism and spintronics to enable accurate system-level evaluations. We believe the core approach can be extended to include other quantum degrees of freedom like valley and pseudospins starting from corresponding density matrices. 

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors. 

Abstract The transition from planar to three-dimensional (3D) magnetic nanostructures represents a significant advancement in both fundamental research and practical applications, offering vast potential for next-generation technologies like ultrahigh-density storage, memory, logic, and neuromorphic computing. Despite being a relatively new field, the emergence of 3D nanomagnetism presents numerous opportunities for innovation, prompting the creation of a comprehensive roadmap by leading international researchers. This roadmap aims to facilitate collaboration and interdisciplinary dialogue to address challenges in materials science, physics, engineering, and computing. The roadmap comprises eighteen sections, roughly divided into three blocks. The first block explores the fundamentals of 3D nanomagnetism, focusing on recent trends in fabrication techniques and imaging methods crucial for understanding complex spin textures, curved surfaces, and small-scale interactions. Techniques such as two-photon lithography and focused electron beam-induced deposition enable the creation of intricate 3D architectures, while advanced imaging methods like electron holography and synchrotron x-ray tomography provide nanoscale spatial resolution for studying magnetization dynamics in three dimensions. Various 3D magnetic systems, including coupled multilayer systems, artificial spin-ice, magneto-plasmonic systems, topological spin textures, and molecular magnets are discussed. The second block introduces analytical and numerical methods for investigating 3D nanomagnetic structures and curvilinear systems, highlighting geometrically curved architectures, interconnected nanowire systems, and other complex geometries. Finite element methods are emphasized for capturing complex geometries, along with direct frequency domain solutions for addressing magnonic problems. The final block focuses on 3D magnonic crystals and networks, exploring their fundamental properties and potential applications in magnonic circuits, memory, and spintronics. Computational approaches using 3D nanomagnetic systems and complex topological textures in 3D spintronics are highlighted for their potential to enable faster and more energy-efficient computing. 

Abstract Probabilistic (p-) computing is a physics-based approach to addressing computational problems which are difficult to solve by conventional von Neumann computers. A key requirement for p-computing is the realization of fast, compact, and energy-efficient probabilistic bits. Stochastic magnetic tunnel junctions (MTJs) with low energy barriers, where the relative dwell time in each state is controlled by current, have been proposed as a candidate to implement p-bits. This approach presents challenges due to the need for precise control of a small energy barrier across large numbers of MTJs, and due to the need for an analog control signal. Here we demonstrate an alternative p-bit design based on perpendicular MTJs that uses the voltage-controlled magnetic anisotropy (VCMA) effect to create the random state of a p-bit on demand. The MTJs are stable (i.e. have large energy barriers) in the absence of voltage, and VCMA-induced dynamics are used to generate random numbers in less than 10 ns/bit. We then show a compact method of implementing p-bits by using VC-MTJs without a bias current. As a demonstration of the feasibility of the proposed p-bits and high quality of the generated random numbers, we solve up to 40 bit integer factorization problems using experimental bit-streams generated by VC-MTJs. Our proposal can impact the development of p-computers, both by supporting a fully spintronic implementation of a p-bit, and alternatively, by enabling true random number generation at low cost for ultralow-power and compact p-computers implemented in complementary metal-oxide semiconductor chips. 

Abstract Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon‐based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon‐compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three‐terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn₃, sputter‐deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room‐temperature TMR effect. First‐principles calculations explain the TMR in terms of the momentum‐resolved spin‐dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes. 

Solving computationally hard problems using conventional computing architectures is often slow and energetically inefficient. Quantum computing may help with these challenges, but it is still in the early stages of development. A quantum-inspired alternative is to build domain-specific architectures with classical hardware. Here we report a sparse Ising machine that achieves massive parallelism where the flips per second—the key figure of merit—scales linearly with the number of probabilistic bits. Our sparse Ising machine architecture, prototyped on a field-programmable gate array, is up to six orders of magnitude faster than standard Gibbs sampling on a central processing unit, and offers 5–18 times improvements in sampling speed compared with approaches based on tensor processing units and graphics processing units. Our sparse Ising machine can reliably factor semi-primes up to 32 bits and it outperforms competition-winning Boolean satisfiability solvers in approximate optimization. Moreover, our architecture can find the correct ground state, even when inexact sampling is made with faster clocks. Our problem encoding and sparsification techniques could be applied to other classical and quantum Ising machines, and our architecture could potentially be scaled to 1,000,000 or more p-bits using analogue silicon or nanodevice technologies.